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Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.
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Кроме того, депутат считает, что страна должна выступить против антироссийских экономических санкций.，更多细节参见谷歌浏览器下载
违反有关法律、法规、规章规定，出售、饲养烈性犬等危险动物的，处警告；警告后不改正的，或者致使动物伤害他人的，处五日以下拘留或者一千元以下罚款；情节较重的，处五日以上十日以下拘留。